Type Designator: 5N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ – Maximum Power Dissipation: 100 W |Vds|ⓘ – Maximum Drain-Source Voltage: 600 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ – Maximum Drain Current: 5 A Tjⓘ – Maximum Junction Temperature: 150 °C Qgⓘ – Total Gate Charge: 15 nC trⓘ – Rise Time: 42 nS Cossⓘ – Output Capacitance: 55 pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 1.8 Ohm Package: TO-220 TO-251 TO-252 TO-220F TO-220F1 DFN-8
