Type Designator: IRF640 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ – Maximum Power Dissipation: 125 W |Vds|ⓘ – Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ – Maximum Drain Current: 18 A Tjⓘ – Maximum Junction Temperature: 150 °C Qgⓘ – Total Gate Charge: 36 nC trⓘ – Rise Time: 60(max) nS Cossⓘ – Output Capacitance: 750(max) pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.18 Ohm Package: TO220A
