Type Designator: 2SB621A Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.6 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 135 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 20 pF Forward Current Transfer Ratio (hFE), MIN: 60
